Si IGBT Flow2
Vce
|
1000V
|
Id
|
200A
|
Tvj=25℃
|
Vcesat=1.28V
|
Tvj=150℃
|
Vcesat=1.61V
|
Dimension
|
107.2mm*47mm*12mm
|
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1000V Trench Field Stop Technology;
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Low Vce,sat;
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Low switching losses;
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Low inductive design;
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High operating temperature:150℃(Tvj,max)
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Solar systems
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3-level-applications
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UPS applications