Si IGBT Flow2
|
Vce
|
1000V
|
|
Id
|
200A
|
|
Tvj=25℃
|
Vcesat=1.28V
|
|
Tvj=150℃
|
Vcesat=1.61V
|
|
Dimension
|
107.2mm*47mm*12mm
|
-
1000V Trench Field Stop Technology;
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Low Vce,sat;
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Low switching losses;
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Low inductive design;
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High operating temperature:150℃(Tvj,max)
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Solar systems
-
3-level-applications
-
UPS applications
