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DIP14 Sic
Vds 1200V
Id ≥300A
Rdson 5.0mΩ (175℃)
Dimension 69.2mm*48.6mm*12mm
  • Optimized 1200V high performance SiC technology;
  • Built-in NTC thermistor for temperature monitoring;
  • High voltage decoupling capacitors for noise immunity;
  • AlN substrate for reinforced thermal management;
  • Enhanced electrical isolation and creepage;
  • High speed switching Operating temperature: 175℃(max);
  • low switching losses;
  • High blocking voltage with low on-resistance;
  • Fast intrinsic diode with low reverse recovery (Qrr);
  • Temperature independent turn-off switching losses;
  • Lead free, RoHS compliant
  • On-Board Charger
  • Energy Storage
  • PV Inverters
  • High Efficient Converters/Inverters