DCM-8 SiC
|
Vds
|
1200V
|
|
Id
|
684A (Tcoolant=65℃）
|
|
Rdson
|
2.8mΩ （175℃）
|
|
Lstray
|
6.5nH
|
|
Rthjf
|
0.1K/W，2.8L/min
|
|
Rstray
|
0.27mΩ/175℃
|
|
BDCS
|
Idmax/Idmin=1.3
|
|
Dimension
|
110mm*63mm*14.4mm
|
-
Ultra-Low Loop Inductance to lower voltage spike;
-
Si₃N₄ substrate & pin-fin cooling structure for ultra-low thermal resistance;
-
Balanced Dynamic Current Sharing （BDCS）;
-
Lower Crosstalk voltage;
-
Maximum work junction temperature 175℃;
-
Smaller parasitic resistance
